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 DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS87 N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1997 June 23 2001 May 18
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown * Low RDSon. APPLICATIONS * Line current interruptor in telephone sets * Applications in relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package.
1 Bottom view 2 3
MAM355
BSS87
PINNING - SOT89 PIN 1 2 3 source drain gate DESCRIPTION
handbook, halfpage
d
g
s
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) total power dissipation drain-source on-state resistance forward transfer admittance Tamb 25 C ID = 400 mA; VGS = 10 V ID = 400 mA; VDS = 25 V open drain CONDITIONS MIN. - - - - - 140 TYP. - - - - 1.6 750 MAX. 200 20 400 1 3 - UNIT V V mA W mS
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 x 10 mm PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature Tamb 25 C; note 1 open drain CONDITIONS - - - - - -55 - MIN. MAX. 200 20 400 1.6 1 +150 150 V V mA A W C C UNIT
2001 May 18
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 125
BSS87
UNIT K/W
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 x 10 mm CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth RDSon Yfs Ciss Coss Crss PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage drain-source on-state resistance transfer admittance input capacitance output capacitance reverse transfer capacitance CONDITIONS ID = 250 A; VGS = 0 VDS = 60 V; VGS = 0 VDS = 200 V; VGS = 0 VGS = 20 V; VDS = 0 ID = 1 mA; VGS = VDS ID = 400 mA; VGS = 10 V ID = 400 mA; VDS = 25 V VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz MIN. 200 - - - 0.8 - 140 - - - TYP. - - 0.1 - - 1.6 750 100 20 10 MAX. - 200 60 100 2.8 3 - 120 30 15 UNIT V nA A nA V mS pF pF pF
Switching times (see Figs 2 and 3) ton toff turn-on time turn-off time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V - - 6 49 10 60 ns ns
2001 May 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSS87
handbook, halfpage
handbook, halfpage
90 %
VDD = 50 V
INPUT 10 %
90 %
10 V 0V ID 50
MSA631
OUTPUT 10 % ton toff
MBB692
VDD = 50 V.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
2001 May 18
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BSS87
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
wM
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 EIAJ SC-62
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001 May 18
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BSS87
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 May 18
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
NOTES
BSS87
2001 May 18
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 72
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp8
Date of release: 2001
May 18
Document order number:
9397 750 08278


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